P-12: A-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications

A high reliable amorphous silicon gate driver with shared dual pull‐down units is proposed and fabricated for large‐sized TFT‐LCD applications. A special unit in the driver is designed to generate bipolar pulse bias for low‐level holding TFTs to suppress the threshold voltage shift, which achieves 4...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.986-989
Main Authors: Hu, Zhijin, Liao, Congwei, Li, Junmei, Li, Wenjie, Zhang, Shengdong, Zeng, Limei, Lee, Chang-Yeh, Lai, Tzu-Chieh, Lo, Chang-Cheng, Lien, A.
Format: Article
Language:English
Subjects:
Amorphous silicon
Bias
bipolar pulse bias
Direct current
gate driver
Gates
Semiconductor devices
shared dual pull-down units
Technical papers
Thin film transistors
Threshold voltage
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Summary:A high reliable amorphous silicon gate driver with shared dual pull‐down units is proposed and fabricated for large‐sized TFT‐LCD applications. A special unit in the driver is designed to generate bipolar pulse bias for low‐level holding TFTs to suppress the threshold voltage shift, which achieves 40.5% and 34.8% improvement compared with conventional DC and unipolar pulse bias respectively according to measurement results.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00256.x