Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing

The degradation of BiCMOS operational amplifiers TLV2451CP under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. It is shown that studied devices are sensitive to both enhanced low dose rate sensitivity and time-dependent effects. Evidently the main rea...

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Bibliographic Details
Published in:Microelectronics and reliability 2014-09, Vol.54 (9-10), p.1745-1748
Main Authors: Petrov, A.S., Tapero, K.I., Ulimov, V.N.
Format: Article
Language:eng ; rus
Subjects:
Accumulation
BiCMOS operational amplifiers
Degradation
Devices
Dosage
Dose rate
Gamma-irradiation
Irradiation
Microelectronics
Operational amplifiers
Total ionizing dose testing
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Summary:The degradation of BiCMOS operational amplifiers TLV2451CP under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. It is shown that studied devices are sensitive to both enhanced low dose rate sensitivity and time-dependent effects. Evidently the main reason for degradation of studied devices is build-up of the interface traps. Obtained results show possibility to develop an approach for total ionizing dose testing of BiCMOS devices considering low dose rate effects.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2014.07.091