Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

•We build a analytical models for calculating Ron and BV of 4H-SiC FJ_SBD.•The models can be used to analyse the effect of FJ parameters on Ron and BV.•The BFOM optimizing process can be finished easily and effectively by our models. The analytical models of on-resistance and reverse breakdown volta...

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Bibliographic Details
Published in:Solid-state electronics 2015-01, Vol.103, p.83-89
Main Authors: Yuan, Hao, Tang, Xiaoyan, Song, Qingwen, Zhang, Yimen, Zhang, Yuming, Yang, Fei, Niu, Yingxi
Format: Article
Language:English
Subjects:
4H-SiC
Analytical model
Breakdown
Breakdown voltage
Diodes
Electric potential
Electrical junctions
Floating junction SBD
Floating structures
Mathematical analysis
Mathematical models
Specific on-resistance
Voltage
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Summary:•We build a analytical models for calculating Ron and BV of 4H-SiC FJ_SBD.•The models can be used to analyse the effect of FJ parameters on Ron and BV.•The BFOM optimizing process can be finished easily and effectively by our models. The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2014.10.004