RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

•MESFET was fabricated on H-terminated DC arc jet CVD diamond films.•Damage of H-termination by O-plasma was avoided by using Au mask photolithography.•Formation of H-termination on diamond surface was indirectly confirmed by DR-FTIR.•RF characteristic of MESFET on DC arc jet CVD diamond film was re...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2013-11, Vol.284, p.798-803
Main Authors: Liu, J.L., Li, C.M., Zhu, R.H., Guo, J.C., Chen, L.X., Wei, J.J., Hei, L.F., Wang, J.J., Feng, Z.H., Guo, H., Lv, F.X.
Format: Article
Language:English
Subjects:
Arc deposition
Chemical vapor deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
DC arc jet CVD
Deposition
Diamond films
Direct current
Exact sciences and technology
H-terminated diamond
Maximum oscillation frequency
Maximum transition frequency
MESFET
MESFETs
Physics
Polycrystalline diamond
Radio frequencies
RF characteristic
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:•MESFET was fabricated on H-terminated DC arc jet CVD diamond films.•Damage of H-termination by O-plasma was avoided by using Au mask photolithography.•Formation of H-termination on diamond surface was indirectly confirmed by DR-FTIR.•RF characteristic of MESFET on DC arc jet CVD diamond film was reported.•Methods of further improving RF performances of devices were discussed. Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6cm2/Vs and the carrier density of 1.096×1013cm−2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (fT) of 5GHz and the maximum oscillation frequency (fmax) of 6GHz at VGS=−0.5V and VDS=−8V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.08.011