Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance-voltage (CV) characteristics on the frequency of the measuring signal allow...

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Bibliographic Details
Published in:Applied surface science 2014-09, Vol.312, p.102-106
Main Authors: HARMATHA, Ladislav, STUCHLIKOVA, Lubica, RACKO, Juraj, MAREK, Juraj, PECHACEK, Juraj, BENKO, Peter, NEMEC, Michal, BREZA, Juraj
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Aluminum oxide
Capacitance
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects
Exact sciences and technology
Fourier analysis
Gallium nitrides
Heterostructures
Physics
Simulation
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Summary:The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al2O3 substrate by Low-Pressure Metal-Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance-voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al0.2GaN0.8/GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2014.05.097