Real-time curvature and optical spectroscopy monitoring of magnetron-sputtered WTi alloy thin films

WTi thin films are known as potential adhesion promoters and diffusion barriers. WTi thin films were deposited by magnetron sputtering from an alloyed target (W:Ti~70:30at.%). Real-time surface differential reflectance (SDR) spectroscopy and wafer-curvature measurements were performed during deposit...

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Bibliographic Details
Published in:Surface & coatings technology 2013-12, Vol.237, p.112-117
Main Authors: Le Priol, A., Simonot, L., Abadias, G., Guérin, P., Renault, P.-O., Le Bourhis, E.
Format: Article
Language:English
Subjects:
Applied sciences
Continuity
Cross-disciplinary physics: materials science
rheology
Deposition
Exact sciences and technology
In situ optical spectroscopy
In situ wafer curvature
Magnetron sputtering
Materials science
Metals. Metallurgy
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Production techniques
Real time
Reflectivity
Silicon substrates
Spectroscopy
Stresses
Surface treatment
Surface treatments
Thin film growth
Thin films
WTi alloy
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Summary:WTi thin films are known as potential adhesion promoters and diffusion barriers. WTi thin films were deposited by magnetron sputtering from an alloyed target (W:Ti~70:30at.%). Real-time surface differential reflectance (SDR) spectroscopy and wafer-curvature measurements were performed during deposition to study the growth and the film continuity threshold. SDR measurements during WTi deposition allow the determination of the change in reflectivity of p-polarized light (at Si substrate Brewster's angle) between WTi film and Si substrate in order to monitor layer growth. The comparison between experimental and simulated WTi SDR signals assuming a homogeneous and continuous layer growth shows that film continuity is ensured beyond a thickness of 4.5±0.2nm. Real-time wafer-curvature measurements allow the determination of the intrinsic stress development in the film. Two regimes are noticed during the growth up to the development of a compressive steady state stress. The early stages of growth are rather complicated and divided into sub-regimes with similar boundaries revealed by both in situ techniques. Deposition of an interfacial continuous layer different from WTi bulk is suggested by both in situ techniques below a thickness of 4.5nm. •We study in situ the growth stages of magnetron sputtered WTi films.•Two complementary optical and mechanical monitoring are performed.•The two techniques clearly show the continuity of WTi films at 4.5nm.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2013.08.065