The Study of Spin-Valley Coupling in Atomically Thin Group VI Transition Metal Dichalcogenides

In the hunt for ultimately thin electronic devices, atomically thin layers of group VI transition metal dichalcogenides (TMDCs) are recognized as ideal 2D materials after the success of graphene. Monolayer TMDCs feature nonzero but contrasting Berry curvatures and valence‐band spin splitting with op...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2014-08, Vol.26 (31), p.5504-5507
Main Authors: Zhu, Bairen, Zeng, Hualing, Dai, Junfeng, Cui, Xiaodong
Format: Article
Language:English
Subjects:
Degrees of freedom
Graphene
Joining
Mathematical analysis
Monolayers
spin-valley couplings
Spintronics
transition metal dichalcogenides
Transition metals
Valleys
valleytronics
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Summary:In the hunt for ultimately thin electronic devices, atomically thin layers of group VI transition metal dichalcogenides (TMDCs) are recognized as ideal 2D materials after the success of graphene. Monolayer TMDCs feature nonzero but contrasting Berry curvatures and valence‐band spin splitting with opposite sign at inequivalent K and K′ valleys located at the corners of the 1st Brillouin zone. These features raise the possibility of manipulating electrons' valley and spin degrees of freedom by optical and electric means, which subsequently makes monolayer TMDCs promising candidates for spintronics and valleytronics applications. Atomically thin transition metal dichal­cogenides (TMDCs) feature degenerate but inequivalent valleys and strong spin‐orbit coupling. These features raise the possibility of quantum manipulation of the spin and valley degrees of freedom, which are the focused topics in spintronics and valleytronics. In this Research News article, experimental progress in the field is discussed, including valley polarization by optical pumping and spin‐valley coupling.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201305367