Polarized photocurrent response in black phosphorus field-effect transistors

We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polar...

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Bibliographic Details
Published in:Nanoscale 2014-08, Vol.6 (15), p.8978-8983
Main Authors: Hong, Tu, Chamlagain, Bhim, Lin, Wenzhi, Chuang, Hsun-Jen, Pan, Minghu, Zhou, Zhixian, Xu, Ya-Qiong
Format: Article
Language:English
Subjects:
Anisotropy
Crystals
Field effect transistors
Phosphorus
Photocurrent
Photoelectric effect
Photovoltaic effect
Semiconductor devices
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Summary:We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at BP-electrode junctions are mainly attributed to the photovoltaic effect in the off-state and photothermoelectric effect in the on-state, and their anisotropic feature primarily results from the directional-dependent absorption of BP crystals.
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr02164a