High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitti...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2014-05, Vol.50 (5), p.354-363
Main Authors: Li, Zhen-Yu, Horng, Ray-Hua, Chi, Gou-Chung, Chang, Chun-Yen, Lee, Chia-Yu, Lin, Da-Wei, Lin, Bing-Cheng, Shen, Kun-Ching, Chiu, Ching-Hsueh, Tu, Po-Min, Kuo, Hao-Chung, Uen, Wu-Yih
Format: Article
Language:eng
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Buffer layers
Chips
Crystal structure
Efficiency
Emission
Emitters
Epitaxial growth
Gallium nitride
Light emitting diodes
Microscopy
Silicon
Silicon substrates
Substrates
Superlattices
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Summary:In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitting diodes (LEDs) on 6-inch Si (111) substrates to suppress cracking and improve the crystalline quality and emission efficiency. The effect of CBLS and QSLs-EBL on the crystalline quality and emission efficiency of InGaN-based LEDs on Si substrates was studied in detail. Optical microscopic images revealed the absence of cracks and Ga melt-back etching. The atomic force microscopy images exhibited that the root-mean-square value of the surface morphology was only 0.82 nm. The full widths at half maxima of the (0002) and (101̅2) reflections in the double crystal X-ray rocking curve were ~330 and 450 respectively. The total threading dislocation density, revealed by transmission electron microscopy, was
ISSN:0018-9197
1558-1713