Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

•We model the electrical and optical characteristics of (CdS/ZnSe)/BeTe QWIP near 300K.•This system is used for the first time in such application.•The simulation takes into account three mechanisms of carrier transport: G–R, Diff and TAT processes.•The investigations have been performed over a wide...

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Bibliographic Details
Published in:Infrared physics & technology 2014-05, Vol.64, p.33-39
Main Authors: Zeiri, N., Abdi-Ben Nasrallah, S., Sfina, N., Said, M.
Format: Article
Language:English
Subjects:
Cadmium sulfides
Density
Dynamic tests
Dynamics
Electrical and optical characteristics
II–VI semiconductors
Intersubband transition
Photodetectors
Quantum efficiency
QWIP
Wavelengths
Zinc selenides
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Summary:•We model the electrical and optical characteristics of (CdS/ZnSe)/BeTe QWIP near 300K.•This system is used for the first time in such application.•The simulation takes into account three mechanisms of carrier transport: G–R, Diff and TAT processes.•The investigations have been performed over a wide range of temperatures and bias voltages.•For 1.55μm cutoff wavelength, D*∼5.7×1010cmHz1/2/W has been achieved in X BeTe minimum. Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R0A), the dynamic resistance as well as bias dependent dynamic resistance (Rd) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6A/W and D*∼5.7×1010cmHz1/2/W have been achieved at 300K in X BeTe conduction band minimum.
ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2014.01.016