Reproducible resistive switching in hydrothermal processed TiO2 nanorod film for non-volatile memory applications

In this study, we examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM). TiO2 nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO2 film is characterized using SEM, XRD, EDAX and FTIR for its morphologic...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2013-05, Vol.194, p.135-139
Main Authors: Senthilkumar, V., Kathalingam, A., Kannan, V., Senthil, Karuppanan, Rhee, Jin-Koo
Format: Article
Language:English
Subjects:
Actuators
Anatase
Devices
Electrical properties
Endurance
Hydrothermal
Nanorods
Nanostructure
Random access memory
Resistive memory
Structural properties
Switching
Titanium dioxide
Titanium oxide
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Summary:In this study, we examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM). TiO2 nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO2 film is characterized using SEM, XRD, EDAX and FTIR for its morphological, structural and compositional studies. XRD result confirms the anatase phase of TiO2. The analysis of I–V results reveals that the switching property of our device originates from the oxidation/reduction reaction occurred at the interface of Ti/TiO2. The device exhibited high ON/OFF ratio (>104), long retention and good endurance performance at RT.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2013.02.009