Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium

The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2014-04, Vol.344 (6181), p.286-289
Main Authors: Lee, Jae-Hyun, Lee, Eun Kyung, Joo, Won-Jae, Jang, Yamujin, Kim, Byung-Sung, Lim, Jae Young, Choi, Soon-Hyung, Ahn, Sung Joon, Ahn, Joung Real, Park, Min-Ho, Yang, Cheol-Woong, Choi, Byoung Lyong, Hwang, Sung-Woo, Whang, Dongmok
Format: Article
Language:English
Subjects:
Carbon
Electronics
Germanium
Germination
Grain boundaries
Graphene
Hydrogen
Illustration
Metric photography
Nucleation
Raman scattering
Semiconductor wafers
Single crystals
Water
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Summary:The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.1252268