Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

Behavior of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity NEuint(ml) of about 1×1020cm−3 and less is investigated with X-ray fluorescent element analysis, Secondary Neutral Mass Spectroscopy (SNMS)...

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Bibliographic Details
Published in:Journal of crystal growth 2013-08, Vol.376, p.28-34
Main Authors: Zayachuk, D.M., Ilyina, O.S., Pashuk, A.V., Mikityuk, V.I., Shlemkevych, V.V., Csik, A., Kaczorowski, D.
Format: Article
Language:English
Subjects:
A1. Doping
A1. Impurities
A1. Segregation
A2. Bridgman technique
A2. Growth from melt
B2. Semiconducting lead compounds
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystal growth
Defects and impurities in crystals
microstructure
Doping
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Growth from melts
zone melting and refining
Impurities
Impurities: concentration, distribution, and gradients
Ingots
Intermetallics
Lead tellurides
Materials science
Melts (crystal growth)
Methods of crystal growth
physics of crystal growth
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Rare earth metals
Solubility, segregation, and mixing
phase separation
Structure of solids and liquids
crystallography
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Summary:Behavior of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity NEuint(ml) of about 1×1020cm−3 and less is investigated with X-ray fluorescent element analysis, Secondary Neutral Mass Spectroscopy (SNMS), and magnetic measurements. The impurity distributions along and across the doped ingots are established. It is revealed that doping impurity enters into the bulk of doped crystals only if its initial concentration in the melt is high enough, approximately 1×1020cm−3. If this concentration is lower, about 1×1019cm−3 and less, the doping Eu impurity is pushed out onto the surface of doped ingot. The thickness of the doped surface layer is estimated to be in the order of several microns or somewhat more. The longitudinal distributions of Eu impurity along the axis of doped ingot–for NEuint(ml)=1×1020cm−3, as well as the transverse one in the surface layer where entire doping impurity is pushed out–for NEuint(ml)=1×1019cm−3, are strongly non-monotonic. Possible reasons for this unusual behavior of Eu doping impurity during the growth of PbTe:Eu crystals from the melt are analyzed. •We investigated the Eu impurity distributions along and across the PbTe:Eu ingots.•Eu impurity enters into the bulk of PbTe:Eu doped ingot if its concentration is high.•Eu impurity is pushed out onto the PbTe:Eu ingot surface if its concentration is low.•Eu impurity is non-monotonically distributed along/across the PbTe:Eu ingots.•The possible mechanism of non-monotonic impurity profiles formation is suggested.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2013.04.039