Crystallographic properties and elemental migration in two-stage prepared CuIn(1-x)Al(x)Se(2) thin films for photovoltaic applications

Two-stage fabrication of CuIn(1-x)Al(x)xSe(2) thin films for photovoltaic absorbers using sputtered Cu-In-Al metallic precursors has been investigated. Precursors containing different relative amounts of Al were selenised and their structural and chemical properties characterised. X-ray diffraction...

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Bibliographic Details
Published in:Journal of alloys and compounds 2013-07, Vol.566, p.180-186
Main Authors: Aninat, Remi, Zoppi, Guillaume, Tempez, Agnes, Chapon, Patrick, Beattie, Neil S, Miles, Robert, bes, Ian
Format: Article
Language:English
Subjects:
Alloys
Aluminum
Annealing
ANNEALING PROCESSES
APPLICATIONS
CHALCOPYRITE
CHEMICAL PROPERTIES
COPPER INDIUM SELENIDE
Photovoltaic cells
Precursors
Segregations
Solar cells
THIN FILMS
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Summary:Two-stage fabrication of CuIn(1-x)Al(x)xSe(2) thin films for photovoltaic absorbers using sputtered Cu-In-Al metallic precursors has been investigated. Precursors containing different relative amounts of Al were selenised and their structural and chemical properties characterised. X-ray diffraction (XRD) analyses revealed that the Al was only incorporated into the chalcopyrite structure for precursor composition ratios x=[Al]/([Al]+[In]) greater than or equal to 0.38, while chemical analysis of the cross-section indicated partial segregation of Al near the back of the film. Precursor films in the range of compositions that yielded no Al incorporation were then selenised at four different temperatures. Glow discharge optical emission spectroscopy, plasma profiling time-of-flight mass spectrometry and XRD analyses provided an insight into the diffusion processes and reactions taking place during the selenisation stage. The effect of post-selenisation annealing without additional Se was also investigated, and led to partial incorporation of the Al into the CuInSe(2) lattice but no rediffusion.
ISSN:0925-8388