Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

Using a variational approach, we perform a theoretical study of hydrostatic pressure effect on the ground-state of axial hydrogenic shallow-donor impurity binding energy in InGaN/GaN square quantum well wire (SQWWs) as a function of the side length within the effective-mass scheme and finite potenti...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2013-02, Vol.410, p.49-52
Main Authors: Ghazi, Haddou El, Jorio, Anouar, Zorkani, Izeddine
Format: Article
Language:English
Subjects:
Binding Energy
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric constant
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Gallium nitrides
Indium gallium nitrides
Mathematical analysis
Physics
Potential barriers
Pressure Effect
Quantum Wire
Quantum wires
Wire
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Summary:Using a variational approach, we perform a theoretical study of hydrostatic pressure effect on the ground-state of axial hydrogenic shallow-donor impurity binding energy in InGaN/GaN square quantum well wire (SQWWs) as a function of the side length within the effective-mass scheme and finite potential barrier. The pressure dependence of wire length, effective mass, dielectric constant and potential barrier are taken into account. Numerical results show that: (i) the binding energy is strongly affected by the wire length and the external applied pressure and (ii) its maximum moves to the narrow wire in particular for height pressure.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2012.10.027