Clean transfer of graphene and its effect on contact resistance

We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form t...

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Bibliographic Details
Published in:Applied physics letters 2013-09, Vol.103 (10)
Main Authors: Lee, Jooho, Kim, Yongsung, Shin, Hyeon-Jin, Lee, ChangSeung, Lee, Dongwook, Moon, Chang-Yul, Lim, Juhwan, Chan Jun, Seong
Format: Article
Language:English
Subjects:
Cleaning
Contact
Contact resistance
Electrodes
Graphene
Mathematical analysis
Polymethyl methacrylates
Residues
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Summary:We demonstrate herein an effective method of forming a high-quality contact between metal and graphene on a wafer as large as 6 in. This gold-assisted transfer method producing no polymer residue on the graphene surface is introduced, and then the gold film is used directly as an electrode to form the transfer length method pattern for calculating the contact resistance. The graphene surface obtained using the gold-assisted transfer method is clean and uniform without residue or contamination, and its contact resistance is at least 60% lower than that obtained using the conventional poly(methyl methacrylate) assisted transfer method.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4819740