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A persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film
The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surf...
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Published in: | Nanoscale 2013-10, Vol.5 (2), p.9659-9665 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in
e.g.
catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on
in situ
temperature dependent scanning tunnelling spectroscopy experiments on pristine oxygen deficient, epitaxial manganite films. Although these films are insulating in subsequent
ex situ
in-plane electronic transport experiments at all temperatures,
in situ
scanning tunnelling spectroscopic data reveal that the surface of these films exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient film. The surprising proximity of the surface MIT transition temperature of nonstoichiometric films with that of the fully oxygenated bulk suggests that the electronic properties in the surface region are not significantly affected by oxygen deficiency in the bulk. This carries important implications for the understanding and functional design of complex oxides and their interfaces with specific electronic properties in catalysis, oxide electronics and electrochemistry.
STS data reveal the existence of a surprising MIT transition at the surface of an oxygen deficient LPCMO thin film. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c3nr02343e |