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Surface state effects on N+P doped electron detector
Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show t...
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Published in: | Journal of instrumentation 2011-12, Vol.6 (12), p.C12019-6 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocity v sub(s), there is no visible effect with respect to fixed oxide charge Q sub(f) otherwise known as interface fixed charge density. |
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ISSN: | 1748-0221 1748-0221 |
DOI: | 10.1088/1748-0221/6/12/C12019 |