Surface state effects on N+P doped electron detector

Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show t...

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Bibliographic Details
Published in:Journal of instrumentation 2011-12, Vol.6 (12), p.C12019-6
Main Authors: Esebamen, O X, Hammarling, K, Thungström, G, Nilsson, H-E
Format: Article
Language:English
Subjects:
Charge
Charge density
charge transport
Detectors
Doping
electron emission
Instrumentation
Irradiation
multiplication and induction
Oxides
pulse formation
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Summary:Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocity v sub(s), there is no visible effect with respect to fixed oxide charge Q sub(f) otherwise known as interface fixed charge density.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/6/12/C12019