A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors

The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line （TRL） calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algo...

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Bibliographic Details
Published in:Journal of semiconductors 2013-03, Vol.34 (3), p.43-47
Main Authors: Wang, Shuai, Li, Ke, Jiang, Yibo, Cong, Mifang, Du, Huan, Han, Zhengsheng
Format: Article
Language:chi ; eng
Subjects:
Algorithms
Calibration
Density
double-diffused
fixture
Fixtures
Impedance
lateral
low
MOSFET
outputpower
Semiconductor devices
Semiconductors
test
thru-reflect-line
Transistors
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Summary:The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line （TRL） calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algorithm, the individual two-port S parameters of each fixture half can be obtained. By de-embedding these S parameters of the test fixture, an accurate calibration can be made. The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width. The impedance of the transistor is obtained, and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/ram power density. From the results, it is seen that the presented TRL calibration algorithm works well.
ISSN:1674-4926
DOI:10.1088/1674-4926/34/3/034005