Nondestructive characterization of textured a-Si:H/c-Si heterojunction solar cell structures with nanometer-scale a-Si:H and In2O3:Sn layers by spectroscopic ellipsometry

Nanometer-scale hydrogenated amorphous silicon (a-Si:H) layers formed on crystalline silicon (c-Si) with pyramid-shaped textures have been characterized by spectroscopic ellipsometry (SE) using a tilt angle measurement configuration, in an attempt to establish a nondestructive method for the structu...

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Bibliographic Details
Published in:Journal of applied physics 2013-07, Vol.114 (4)
Main Authors: Matsuki, Nobuyuki, Fujiwara, Hiroyuki
Format: Article
Language:English
Subjects:
Crystal structure
Ellipsometry
Heterojunctions
Photovoltaic cells
Solar cells
Spectroscopy
Surface layer
Texture
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Summary:Nanometer-scale hydrogenated amorphous silicon (a-Si:H) layers formed on crystalline silicon (c-Si) with pyramid-shaped textures have been characterized by spectroscopic ellipsometry (SE) using a tilt angle measurement configuration, in an attempt to establish a nondestructive method for the structural characterization of the a-Si:H/c-Si heterojunction solar cells. By applying an a-Si:H dielectric function model developed recently, the thickness and SiH2 content of the a-Si:H layer have been determined even on the textured substrates. Furthermore, from the SE analysis incorporating the Drude model, the carrier properties of the In2O3:Sn layers in the textured solar-cell structure have been characterized.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4812479