Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

The importance of multicarrier contributions to electrical conductivity in epitaxial InN layered structures has been debated for last few years. In this work hydrostatic pressure was used to verify multicarrier conduction in nominally undoped InN layers with In‐growth polarity. To distinguish betwee...

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Bibliographic Details
Published in:Physica Status Solidi. B: Basic Solid State Physics 2013-04, Vol.250 (4), p.746-749
Main Authors: Dmowski, L. H., Konczewicz, L., Suski, T., Contreras, S., Lu, H., Schaff, W. J.
Format: Article
Language:English
Subjects:
Electrical resistivity
Evolution
Gallium nitrides
high-pressure
III-V-nitrides
Magnetic fields
magneto-transport
Mathematical analysis
mobility
Polarity
Resistivity
Solid state physics
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Summary:The importance of multicarrier contributions to electrical conductivity in epitaxial InN layered structures has been debated for last few years. In this work hydrostatic pressure was used to verify multicarrier conduction in nominally undoped InN layers with In‐growth polarity. To distinguish between different types of carriers the mobility spectrum analysis was applied, based on conductivity tensor components σxx and σxy measured as a function of magnetic field. Different contributions to the electric conduction (including the surprising presence of holes) and their evolution with pressure have been shown.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201200508