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Study of the EFG tensor at 75As nuclei in Ge-As-Se chalcogenide glasses
Asymmetry parameters of the electric field gradient tensor at 75As nuclei were determined for chalcogenide glassy semiconductors (CGS) of the Ge‐As‐Se system by comparing the experimental and simulated 75As nuclear quadrupole resonance nutation interferograms. The electric field gradient asymmetry i...
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Published in: | Magnetic resonance in chemistry 2013-10, Vol.51 (10), p.614-620 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Asymmetry parameters of the electric field gradient tensor at 75As nuclei were determined for chalcogenide glassy semiconductors (CGS) of the Ge‐As‐Se system by comparing the experimental and simulated 75As nuclear quadrupole resonance nutation interferograms. The electric field gradient asymmetry in CGS was analyzed, and it is believed that a structural change in these glassy semiconductors takes place at r¯ = 2.425. Electron paramagnetic resonance spectra of the Ge‐As‐Se system were obtained for the first time. A comparison was made between the results of analysis of the Ge‐As‐Se system by nuclear quadrupole resonance and electron paramagnetic resonance methods, and this allowed us to make the supposition that a structural phase transition occurs at r¯ = 2.4 from two‐dimensional to three‐dimensional CGS structure. Copyright © 2013 John Wiley & Sons, Ltd.
Asymmetry parameters of the electric field gradient tensor at 75As nuclei were determined for chalcogenide glassy semiconductors of the Ge‐As‐Se system by comparing the experimental and simulated 75As nuclear quadrupole resonance nutation interferograms. A comparison was made between the results of the analysis of the Ge‐As‐Se system by nuclear quadrupole resonance and electron paramagnetic resonance methods, and this allowed us to make supposition that a structural phase transition occurs at r¯ = 2.4 from two‐dimensional to three‐dimensional chalcogenide glassy semiconductors structure. |
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ISSN: | 0749-1581 1097-458X |
DOI: | 10.1002/mrc.3990 |