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Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films
The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In 1−x Ga x )Se 2 (CIGS) thin films, the CIG precursors were then sele...
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| Published in: | Journal of materials science. Materials in electronics 2013-07, Vol.24 (7), p.2553-2557 |
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| cites | cdi_FETCH-LOGICAL-c379t-598a5ffc5f6bc908b8d14d44bc3024fce2037bc35a8d1b0cc2c972f1c55742813 |
| container_end_page | 2557 |
| container_issue | 7 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Liu, Jun Wei, Ai Xiang Zhao, Yu Yan, Zhi Qiang |
| description | The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In
1−x
Ga
x
)Se
2
(CIGS) thin films, the CIG precursors were then selenized with solid Se powder using a three-step reaction temperature profile. The influence of stacking type in precursors on structure, composition, morphology and electrical properties of the CIGS films is investigated by X-ray diffraction, energy dispersive spectrometer, scanning electron microscope and Hall effect measurement. The results reveal that the stacking type of the precursor has a strong influence on composition, morphology and properties of the CIGS thin films. The atomic ratios of Cu/(In+Ga)/Se of the CIGS films A and B are 1.61:1:2.11 and 1.39:1:2.04, respectively. The better quality CIGS thin films can be obtained through selenization of metallic precursor of CuInGa/CuIn/CuInGa/glass. The CIGS films are p-type semiconductor material. The hole concentration, resistivity and hole mobility of the CIGS thin films is 2.51 × 10
17
cm
−3
, 3.11 × 10
4
Ω cm and 19.8 cm
2
V
−1
s
−1
, respectively. |
| doi_str_mv | 10.1007/s10854-013-1132-3 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1417883694</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2998035441</sourcerecordid><originalsourceid>FETCH-LOGICAL-c379t-598a5ffc5f6bc908b8d14d44bc3024fce2037bc35a8d1b0cc2c972f1c55742813</originalsourceid><addsrcrecordid>eNp1kM9rFDEYhoNYcK3-Ad4CInhwan5OMkdZ2looeLAFbyH7bbJNnUnGfLOH_e-bZYuI0FMI3_O-vDyEfODsgjNmviJnVquOcdlxLkUnX5EV10Z2yopfr8mKDdp0SgvxhrxFfGSM9UraFRkvYwyw0BIpLh5-p7yjy2EONGU61wD7iqUiLZlCmeaCaUklf6FTqfNDGcvuQH3e0jC2jprAjy1U5lCXFPDYuTwEur65_kljGid8R86iHzG8f37Pyf3V5d36e3f74_pm_e22A2mGpdOD9TpG0LHfwMDsxm652iq1AcmEihAEk6Z9tG-HDQMQMBgROWhtlLBcnpPPp9425s8-4OKmhBDG0edQ9ui44sZa2Q-qoR__Qx_Lvua2znHZW617w4dG8RMFtSDWEN1c0-TrwXHmjv7dyb9r_t3Rv5Mt8-m52WMTE6vPkPBvUBjd90Ycx4oTh-2Ud6H-s-DF8ieFaZV1</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1368556719</pqid></control><display><type>article</type><title>Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films</title><source>Springer Link</source><creator>Liu, Jun ; Wei, Ai Xiang ; Zhao, Yu ; Yan, Zhi Qiang</creator><creatorcontrib>Liu, Jun ; Wei, Ai Xiang ; Zhao, Yu ; Yan, Zhi Qiang</creatorcontrib><description>The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In
1−x
Ga
x
)Se
2
(CIGS) thin films, the CIG precursors were then selenized with solid Se powder using a three-step reaction temperature profile. The influence of stacking type in precursors on structure, composition, morphology and electrical properties of the CIGS films is investigated by X-ray diffraction, energy dispersive spectrometer, scanning electron microscope and Hall effect measurement. The results reveal that the stacking type of the precursor has a strong influence on composition, morphology and properties of the CIGS thin films. The atomic ratios of Cu/(In+Ga)/Se of the CIGS films A and B are 1.61:1:2.11 and 1.39:1:2.04, respectively. The better quality CIGS thin films can be obtained through selenization of metallic precursor of CuInGa/CuIn/CuInGa/glass. The CIGS films are p-type semiconductor material. The hole concentration, resistivity and hole mobility of the CIGS thin films is 2.51 × 10
17
cm
−3
, 3.11 × 10
4
Ω cm and 19.8 cm
2
V
−1
s
−1
, respectively.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-013-1132-3</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; CIGS ; COMPOSITION ; Composition effects ; Condensed matter: structure, mechanical and thermal properties ; COPPER SELENIDE ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; ELECTRICAL PROPERTIES ; Electronics ; Exact sciences and technology ; Glass ; GLASSES ; Glasses (including metallic glasses) ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials ; Materials Science ; Methods of deposition of films and coatings; film growth and epitaxy ; Morphology ; Optical and Electronic Materials ; Physics ; Precursors ; PROPERTIES ; Scanning electron microscopy ; Specific materials ; Stacking ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; THIN FILMS</subject><ispartof>Journal of materials science. Materials in electronics, 2013-07, Vol.24 (7), p.2553-2557</ispartof><rights>Springer Science+Business Media New York 2013</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-598a5ffc5f6bc908b8d14d44bc3024fce2037bc35a8d1b0cc2c972f1c55742813</citedby><cites>FETCH-LOGICAL-c379t-598a5ffc5f6bc908b8d14d44bc3024fce2037bc35a8d1b0cc2c972f1c55742813</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27566721$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Jun</creatorcontrib><creatorcontrib>Wei, Ai Xiang</creatorcontrib><creatorcontrib>Zhao, Yu</creatorcontrib><creatorcontrib>Yan, Zhi Qiang</creatorcontrib><title>Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In
1−x
Ga
x
)Se
2
(CIGS) thin films, the CIG precursors were then selenized with solid Se powder using a three-step reaction temperature profile. The influence of stacking type in precursors on structure, composition, morphology and electrical properties of the CIGS films is investigated by X-ray diffraction, energy dispersive spectrometer, scanning electron microscope and Hall effect measurement. The results reveal that the stacking type of the precursor has a strong influence on composition, morphology and properties of the CIGS thin films. The atomic ratios of Cu/(In+Ga)/Se of the CIGS films A and B are 1.61:1:2.11 and 1.39:1:2.04, respectively. The better quality CIGS thin films can be obtained through selenization of metallic precursor of CuInGa/CuIn/CuInGa/glass. The CIGS films are p-type semiconductor material. The hole concentration, resistivity and hole mobility of the CIGS thin films is 2.51 × 10
17
cm
−3
, 3.11 × 10
4
Ω cm and 19.8 cm
2
V
−1
s
−1
, respectively.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>CIGS</subject><subject>COMPOSITION</subject><subject>Composition effects</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>COPPER SELENIDE</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>ELECTRICAL PROPERTIES</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>GLASSES</subject><subject>Glasses (including metallic glasses)</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials</subject><subject>Materials Science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Morphology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Precursors</subject><subject>PROPERTIES</subject><subject>Scanning electron microscopy</subject><subject>Specific materials</subject><subject>Stacking</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>THIN FILMS</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp1kM9rFDEYhoNYcK3-Ad4CInhwan5OMkdZ2looeLAFbyH7bbJNnUnGfLOH_e-bZYuI0FMI3_O-vDyEfODsgjNmviJnVquOcdlxLkUnX5EV10Z2yopfr8mKDdp0SgvxhrxFfGSM9UraFRkvYwyw0BIpLh5-p7yjy2EONGU61wD7iqUiLZlCmeaCaUklf6FTqfNDGcvuQH3e0jC2jprAjy1U5lCXFPDYuTwEur65_kljGid8R86iHzG8f37Pyf3V5d36e3f74_pm_e22A2mGpdOD9TpG0LHfwMDsxm652iq1AcmEihAEk6Z9tG-HDQMQMBgROWhtlLBcnpPPp9425s8-4OKmhBDG0edQ9ui44sZa2Q-qoR__Qx_Lvua2znHZW617w4dG8RMFtSDWEN1c0-TrwXHmjv7dyb9r_t3Rv5Mt8-m52WMTE6vPkPBvUBjd90Ycx4oTh-2Ud6H-s-DF8ieFaZV1</recordid><startdate>20130701</startdate><enddate>20130701</enddate><creator>Liu, Jun</creator><creator>Wei, Ai Xiang</creator><creator>Zhao, Yu</creator><creator>Yan, Zhi Qiang</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7QQ</scope><scope>H8G</scope></search><sort><creationdate>20130701</creationdate><title>Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films</title><author>Liu, Jun ; Wei, Ai Xiang ; Zhao, Yu ; Yan, Zhi Qiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-598a5ffc5f6bc908b8d14d44bc3024fce2037bc35a8d1b0cc2c972f1c55742813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>CIGS</topic><topic>COMPOSITION</topic><topic>Composition effects</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>COPPER SELENIDE</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>ELECTRICAL PROPERTIES</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>GLASSES</topic><topic>Glasses (including metallic glasses)</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials</topic><topic>Materials Science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Morphology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Precursors</topic><topic>PROPERTIES</topic><topic>Scanning electron microscopy</topic><topic>Specific materials</topic><topic>Stacking</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Jun</creatorcontrib><creatorcontrib>Wei, Ai Xiang</creatorcontrib><creatorcontrib>Zhao, Yu</creatorcontrib><creatorcontrib>Yan, Zhi Qiang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>Materials Research Database</collection><collection>ProQuest Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Ceramic Abstracts</collection><collection>Copper Technical Reference Library</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Jun</au><au>Wei, Ai Xiang</au><au>Zhao, Yu</au><au>Yan, Zhi Qiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2013-07-01</date><risdate>2013</risdate><volume>24</volume><issue>7</issue><spage>2553</spage><epage>2557</epage><pages>2553-2557</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><abstract>The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In
1−x
Ga
x
)Se
2
(CIGS) thin films, the CIG precursors were then selenized with solid Se powder using a three-step reaction temperature profile. The influence of stacking type in precursors on structure, composition, morphology and electrical properties of the CIGS films is investigated by X-ray diffraction, energy dispersive spectrometer, scanning electron microscope and Hall effect measurement. The results reveal that the stacking type of the precursor has a strong influence on composition, morphology and properties of the CIGS thin films. The atomic ratios of Cu/(In+Ga)/Se of the CIGS films A and B are 1.61:1:2.11 and 1.39:1:2.04, respectively. The better quality CIGS thin films can be obtained through selenization of metallic precursor of CuInGa/CuIn/CuInGa/glass. The CIGS films are p-type semiconductor material. The hole concentration, resistivity and hole mobility of the CIGS thin films is 2.51 × 10
17
cm
−3
, 3.11 × 10
4
Ω cm and 19.8 cm
2
V
−1
s
−1
, respectively.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-013-1132-3</doi><tpages>5</tpages></addata></record> |
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| issn | 0957-4522 1573-482X |
| language | eng |
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| source | Springer Link |
| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science CIGS COMPOSITION Composition effects Condensed matter: structure, mechanical and thermal properties COPPER SELENIDE Cross-disciplinary physics: materials science rheology Deposition by sputtering ELECTRICAL PROPERTIES Electronics Exact sciences and technology Glass GLASSES Glasses (including metallic glasses) Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy Morphology Optical and Electronic Materials Physics Precursors PROPERTIES Scanning electron microscopy Specific materials Stacking Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) THIN FILMS |
| title | Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films |
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