Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films

The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In 1−x Ga x )Se 2 (CIGS) thin films, the CIG precursors were then sele...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2013-07, Vol.24 (7), p.2553-2557
Main Authors: Liu, Jun, Wei, Ai Xiang, Zhao, Yu, Yan, Zhi Qiang
Format: Article
Language:English
Subjects:
Applied sciences
Characterization and Evaluation of Materials
Chemistry and Materials Science
CIGS
COMPOSITION
Composition effects
Condensed matter: structure, mechanical and thermal properties
COPPER SELENIDE
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
ELECTRICAL PROPERTIES
Electronics
Exact sciences and technology
Glass
GLASSES
Glasses (including metallic glasses)
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials
Materials Science
Methods of deposition of films and coatings
film growth and epitaxy
Morphology
Optical and Electronic Materials
Physics
Precursors
PROPERTIES
Scanning electron microscopy
Specific materials
Stacking
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
THIN FILMS
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Summary:The copper-indium-gallium (CIG) metallic precursors with different stacking type (A: CuGa/CuIn/CuGa/glass and B: CuInGa/CuIn/CuInGa/glass) were prepared onto glass substrates by magnetron sputtering method. In order to prepare Cu(In 1−x Ga x )Se 2 (CIGS) thin films, the CIG precursors were then selenized with solid Se powder using a three-step reaction temperature profile. The influence of stacking type in precursors on structure, composition, morphology and electrical properties of the CIGS films is investigated by X-ray diffraction, energy dispersive spectrometer, scanning electron microscope and Hall effect measurement. The results reveal that the stacking type of the precursor has a strong influence on composition, morphology and properties of the CIGS thin films. The atomic ratios of Cu/(In+Ga)/Se of the CIGS films A and B are 1.61:1:2.11 and 1.39:1:2.04, respectively. The better quality CIGS thin films can be obtained through selenization of metallic precursor of CuInGa/CuIn/CuInGa/glass. The CIGS films are p-type semiconductor material. The hole concentration, resistivity and hole mobility of the CIGS thin films is 2.51 × 10 17  cm −3 , 3.11 × 10 4  Ω cm and 19.8 cm 2  V −1  s −1 , respectively.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-013-1132-3