Thermo-Mechanical Characterization of Au-In Transient Liquid Phase Bonding Die-Attach

Semiconductor die-attach techniques are critically important in the implementation of high-temperature wide-bandgap power devices. In this paper, thermal and mechanical characteristics of Au-In transient liquid phase (TLP) die-attach are examined for SiC devices. Samples with SiC diodes TLP-bonded t...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2013-05, Vol.3 (5), p.716-723
Main Authors: Grummel, B. J., Shen, Z. J., Mustain, H. A., Hefner, A. R.
Format: Article
Language:English
Subjects:
Au-In
Bonding
Devices
die-attach
Gold
high temperature
Impedance
Indium
packaging
power semiconductor
reliability
Semiconductors
Shear strength
Silicon carbide
Silicon nitride
solid liquid interdiffusion
thermal cycling
transient liquid phase bonding
widebandgap
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Semiconductor die-attach techniques are critically important in the implementation of high-temperature wide-bandgap power devices. In this paper, thermal and mechanical characteristics of Au-In transient liquid phase (TLP) die-attach are examined for SiC devices. Samples with SiC diodes TLP-bonded to copper-metalized silicon nitride substrates are made using several different values for such fabrication properties as gold and indium thickness, Au/In ratio, and bonding pressure. The samples are then characterized for die-attach voiding, shear strength, and thermal impedance. It is found that the Au-In TLP-bonded samples offer a high average shear strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction through the substrate. It is also discovered that some of the fabrication properties have a greater influence on the bond characteristics than others. Overall, TLP bonding remains promising for high-temperature power electronic die-attach.
ISSN:2156-3950
2156-3985
DOI:10.1109/TCPMT.2013.2239702