Modelling charge transport lengths in heterojunction solar cells

A drift-diffusion model is used to estimate the minority carrier transport length and depletion width in heterojunction solar cells from measured external quantum efficiency (EQE) data. The model is applied to Cu2O-ZnO heterojunctions synthesized by electrodeposition and thermal oxidation, and the e...

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Bibliographic Details
Published in:Applied physics letters 2012-12, Vol.101 (25)
Main Authors: Musselman, K. P., Ievskaya, Y., MacManus-Driscoll, J. L.
Format: Article
Language:English
Subjects:
Charge transport
COPPER OXIDE
CUPROUS OXIDE
Depletion
Diffusion length
Drift
ELECTRODEPOSITION
Heterojunctions
INTERFACES
Minority carriers
Photovoltaic cells
Solar cells
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Summary:A drift-diffusion model is used to estimate the minority carrier transport length and depletion width in heterojunction solar cells from measured external quantum efficiency (EQE) data. The model is applied to Cu2O-ZnO heterojunctions synthesized by electrodeposition and thermal oxidation, and the electron drift and diffusion lengths are estimated: Ldrift ≈ 110 nm for electrodeposited Cu2O and Ldrift ≈ 2790 nm and Ldiff ≈ 310 nm for thermally oxidized Cu2O. Better fitting of EQE data is obtained than with traditional models that neglect recombination in the depletion region.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4771981