Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior...

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Bibliographic Details
Published in:Applied physics letters 2012-12, Vol.101 (25)
Main Authors: Xiao, Y. G., Chen, Z. J., Tang, M. H., Tang, Z. H., Yan, S. A., Li, J. C., Gu, X. C., Zhou, Y. C., Ouyang, X. P.
Format: Article
Language:English
Subjects:
Capacitance
Channels
Electrical properties
Electrodes
Ferroelectric materials
Ferroelectricity
Semiconductor devices
Transistors
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Summary:The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S 
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4772982