A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices

The short-channel effects (SCEs) of planar bulk and fully depleted finFET devices have been compared using the same junction overlap and lateral gradient, and it is shown that, for finFET devices, a significant component of electrostatic control arises from a naturally present shallow extension junc...

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Bibliographic Details
Published in:IEEE electron device letters 2012-06, Vol.33 (6), p.776-778
Main Authors: Muralidhar, R., Jin Cai, Lauer, I., Chan, K., Kulkarni, P., Young-Hee Kim, Zhibin Ren, Dae-Gyu Park, Oldiges, P., Shahidi, G.
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Degradation
Depletion
Devices
Doping
Drains
Electronics
Electrostatics
Exact sciences and technology
finFET
Junctions
Logic gates
Performance evaluation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
short-channel control
Silicon
TCAD
Transistors
ultrashallow extensions
ultrashallow junctions
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Summary:The short-channel effects (SCEs) of planar bulk and fully depleted finFET devices have been compared using the same junction overlap and lateral gradient, and it is shown that, for finFET devices, a significant component of electrostatic control arises from a naturally present shallow extension junction. When such shallow junctions are applied to a bulk device, we show that the SCE becomes comparable to that of a finFET. Furthermore, we show that, if an embedded source/drain stressor is incorporated in a bulk device, it will not degrade the short-channel benefit of the ultrashallow junctions. The ability to span a wide power/performance range by doping and the improvement in SCEs by the use of ultrashallow extension junctions can potentially extend the life of bulk-type technologies.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2192411