Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of InxGa1−xSb/AlyGa1−ySb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW struc...

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Bibliographic Details
Published in:Journal of applied physics 2013-02, Vol.113 (5)
Main Authors: Jahan, Nahid A., Hermannstädter, Claus, Sasakura, Hirotaka, Rotter, Thomas J., Ahirwar, Pankaj, Balakrishnan, Ganesh, Kumano, Hidekazu, Suemune, Ikuo
Format: Article
Language:English
Subjects:
Activation energy
Augers
Carriers
Escape systems
Photoluminescence
Quantum wells
Quenching
Spectroscopy
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Summary:GaSb based quantum wells (QWs) show promising optical properties in near-infrared spectral range. In this paper, we present photoluminescence (PL) spectroscopies of InxGa1−xSb/AlyGa1−ySb QWs and discuss the possible thermal quenching and non-radiative carrier recombination mechanisms of the QW structures. The In and Al concentrations as well as the QW thicknesses were precisely determined with the X-ray diffraction measurements. Temperature dependent time-integrated and time-resolved PL spectroscopies resulted in the thermal activation energies of ∼45 meV, and the overall self-consistent calculation of the band parameters based on the measured physical values confirmed that the activation energies are due to the hole escape from the QW to the barriers. The relation of the present single carrier escape mechanism with the other escape mechanisms reported with other material systems was discussed based on the estimated band offset. The relation of the present thermal hole escape to the Auger recombination was also discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4789374