Crystallization behaviour of co-sputtered Cu2ZnSnS4 precursor prepared by sequential sulfurization processes

Cu2ZnSnS4 (CZTS) thin films were prepared by the sequential sulfurization of a co-sputtered precursor with a multitarget (Cu, ZnS, and SnS2) sputtering system. In order to investigate the crystallization behaviour of the thin films, the precursors were sulfurized in a tube furnace at different tempe...

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Bibliographic Details
Published in:Nanotechnology 2013-03, Vol.24 (9), p.095706-095706
Main Authors: Han, Junhee, Shin, Seung Wook, Gang, Myeong Gil, Kim, Jin Hyeok, Lee, Jeong Yong
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Specific phase transitions
Structural transitions in nanoscale materials
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Cu2ZnSnS4 (CZTS) thin films were prepared by the sequential sulfurization of a co-sputtered precursor with a multitarget (Cu, ZnS, and SnS2) sputtering system. In order to investigate the crystallization behaviour of the thin films, the precursors were sulfurized in a tube furnace at different temperatures for different time durations. The Raman spectra of the sulfurized thin films showed that their crystallinity gradually improved with an increase in the sulfurization temperature and duration. However, transmission electron microscopy revealed an unexpected result-the precursor thin films were not completely transformed to the CZTS phase and showed the presence of uncrystallized material when sulfurized at 250-400 °C for 60 min and at 500 °C for 30 min. Thus, the crystallization of the co-sputtered precursor thin films showed a strong dependence on the sulfurization temperature and duration. The crystallization mechanism of the precursor thin films was understood on the basis of these results and has been described in this paper. The understanding of this mechanism may improve the standard preparation method for high-quality CZTS absorber layers.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/9/095706