Computer simulation of pulsed laser processing of amorphous Si

The paper introduces a 3D computer simulation model of the melting and recrystallization process of amorphous Si induced by pulsed laser irradiation. The model takes into account the temperature dependence of thermal and optical properties of crystalline, amorphous and liquid Si. The melting process...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2000-09, Vol.71 (3), p.285-297
Main Author: TOSTO, S
Format: Article
Language:English
Subjects:
Amorphous silicon
Computer simulation
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Crystal structure
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Liquids
Materials science
Mathematical models
Melting
Nucleation
Physics
Pulsed lasers
Radiation effects on specific materials
Radiation treatment (particle and electromagnetic)
Radiation treatments
Semiconductors
Solid-solid transitions
Specific phase transitions
Structure of solids and liquids
crystallography
Treatment of materials and its effects on microstructure and properties
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Summary:The paper introduces a 3D computer simulation model of the melting and recrystallization process of amorphous Si induced by pulsed laser irradiation. The model takes into account the temperature dependence of thermal and optical properties of crystalline, amorphous and liquid Si. The melting process is described by introducing for each volume element of melt pool the characteristic times of beginning of melting, end of melting and nucleation of a stable nucleus. The solution of heat equations of liquid and solid phases also provides one with the nucleation rates and temperatures. These data enable one to discriminate whether amorphous or crystalline phases are really allowed to be formed. Two examples of computer simulation are carried out to show the outputs of the model.
ISSN:0947-8396
1432-0630
DOI:10.1007/s003390000535