Development of MBE II–VI Epilayers on GaAs(211)B

Large-area, low-cost substrates are envisioned for next-generation HgCdTe infrared focal-plane arrays (IRFPA). Si, GaAs, Ge, and InSb have been previously examined as potential candidates. Fabrication of IRFPAs based on these substrates is limited by fundamental materials properties that potentially...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electronic materials 2012-10, Vol.41 (10), p.2707-2713
Main Authors: Jacobs, R.N., Nozaki, C., Almeida, L.A., Jaime-Vasquez, M., Lennon, C., Markunas, J.K., Benson, D., Smith, P., Zhao, W.F., Smith, D.J., Billman, C., Arias, J., Pellegrino, J.
Format: Article
Language:English
Subjects:
Applied sciences
Buffer layers
Cadmium compounds
Characterization and Evaluation of Materials
Chemistry and Materials Science
Cross-disciplinary physics: materials science
rheology
Electronics
Electronics and Microelectronics
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Instrumentation
Intermetallics
Materials
Materials Science
Mercury cadmium telluride
Mercury compounds
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical and Electronic Materials
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Solid State Physics
Substrates
Tellurides
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Large-area, low-cost substrates are envisioned for next-generation HgCdTe infrared focal-plane arrays (IRFPA). Si, GaAs, Ge, and InSb have been previously examined as potential candidates. Fabrication of IRFPAs based on these substrates is limited by fundamental materials properties that potentially lead to lower detector performance and operability. Lattice and thermal mismatch between the substrate and epilayer are just two of several material factors that must be considered. We have reviewed these factors in the context of more recent data, and determined it worthwhile to revisit the use of GaAs substrates for epitaxial growth of HgCdTe. Our study starts with an evaluation of the surface quality (epireadiness) of commercially available (211) B-oriented GaAs substrates. Molecular beam epitaxial growth of CdTe buffer layers and subsequent HgCdTe absorber layers are performed in separate vacuum-interconnected chambers. The importance of optimization of the CdTe buffer layer growth for high-quality HgCdTe is detailed through surface morphology and x-ray studies. x-Ray diffraction rocking-curve full-width at half-maximum values as low as 52 arcsec have been obtained. Long-wave infrared Hg 1− x Cd x Te ( x  = 0.23) has been grown on these buffer layers, producing cross-hatch-dominated surface morphologies, with dislocation densities as low as ∼3 × 10 6  cm −2 . We have also obtained (for optimized layers), 80-K Hall-effect n -type carrier concentration and electron mobility of approximately ~1.5 × 10 15  cm −3 and 1 × 10 5  cm 2  V −1  s −1 , respectively. Finally, we briefly compare GaAs and Si in light of our preliminary investigation.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-012-2218-z