Short-Wave Infrared HgCdTe Avalanche Photodiodes

Short-wave infrared (SWIR) HgCdTe avalanche photodiodes (APDs) have been developed to address low-flux applications at low operating temperature and for laser detection at higher temperatures. Stable multiplication gains in excess of 200 have been observed in homojunction APDs with cutoff wavelength...

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Bibliographic Details
Published in:Journal of electronic materials 2012-10, Vol.41 (10), p.2928-2936
Main Authors: Rothman, Johan, Mollard, Laurent, Bosson, Sylvie, Vojetta, Gautier, Foubert, Kevin, Gatti, Sylvain, Bonnouvrier, Gwladys, Salveti, Frederic, Kerlain, Alexandre, Pacaud, Olivier
Format: Article
Language:English
Subjects:
Applied sciences
Bias
Cadmium
Cadmium compounds
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electric fields
Electronics
Electronics and Microelectronics
Exact sciences and technology
Gain
Infrared
Instrumentation
Integrated circuits
Intermetallics
Materials
Materials Science
Mathematical models
Mercury compounds
Multiplication
Optical and Electronic Materials
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid State Physics
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Summary:Short-wave infrared (SWIR) HgCdTe avalanche photodiodes (APDs) have been developed to address low-flux applications at low operating temperature and for laser detection at higher temperatures. Stable multiplication gains in excess of 200 have been observed in homojunction APDs with cutoff wavelengths down to 2.8  μ m and operating temperatures up to 300 K, associated with low excess noise F  
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-012-1970-4