Trimming of high-Q-factor silicon ring resonators by electron beam bleaching

We demonstrate a novel position-resolved resonance trimming strategy for silicon ring resonators. Ring resonators are covered with a chromophore-doped guest host polymer cladding. Illumination of the polymer cladding with high-energy electrons causes a bleaching of the chromophore molecules. Bleachi...

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Bibliographic Details
Published in:Optics letters 2012-08, Vol.37 (15), p.3114-3116
Main Authors: Prorok, Stefan, Petrov, Alexander Yu, Eich, Manfred, Luo, Jingdong, Jen, Alex K-Y
Format: Article
Language:English
Subjects:
Bleaching
Chromophores
Cladding
Refractive index
Refractivity
Resonators
Silicon
Trimming
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Summary:We demonstrate a novel position-resolved resonance trimming strategy for silicon ring resonators. Ring resonators are covered with a chromophore-doped guest host polymer cladding. Illumination of the polymer cladding with high-energy electrons causes a bleaching of the chromophore molecules. Bleaching of the chromophores induces a reduction of the polymer refractive index, which can be used to trim the resonance frequency of the ring resonators. A maximum refractive index change of 0.06 and a TM polarization resonance shift of 16.4 nm have been measured. A Q factor of 20,000 before bleaching remains unaltered after the electron beam exposure process.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.37.003114