Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices

This paper presents a new methodology to characterize and simulate the electro-thermal aspects of packaged power drivers using multi-trenched XtreMOSTM devices. Electrical device data is collected by pulsed and DC measurements. Thermal data is collected through on-chip sensors and through a full sur...

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Bibliographic Details
Published in:Microelectronics 2012-09, Vol.43 (9), p.618-623
Main Authors: Rhayem, J., Besbes, B., Blečić, R., Bychikhin, S., Haberfehlner, G., Pogany, D., Desoete, B., Gillon, R., Wieers, A., Tack, M.
Format: Article
Language:English
Subjects:
3D electro-thermal simulation
Bias
Devices
Drivers
Electric power generation
Integated power devices
Mathematical models
SiO2 trenches
TCP (protocol)
Temperature compensation
Thermal conductivity
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Summary:This paper presents a new methodology to characterize and simulate the electro-thermal aspects of packaged power drivers using multi-trenched XtreMOSTM devices. Electrical device data is collected by pulsed and DC measurements. Thermal data is collected through on-chip sensors and through a full surface high resolution transient interferometric mapping (TIM). For the first time a data driven segmented electro-thermal transient model is proposed to accurately describe the thermal profile behavior for the mutli-trenched devices. Further investigations of the thermal heating impact on the driver due to the low thermal conductivity of the trenches (SiO2) have been carried out. The results of the investigations have been discussed for two different gate to source (VGS) bias conditions: VGS below the temperature compensation point (TCP), which is a bias condition that might lead to a thermal runaway, and VGS above TCP.
ISSN:1879-2391
0026-2692
1879-2391
DOI:10.1016/j.mejo.2011.09.010