A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection

► We demonstrate a switching device with SS108. ► The device structure features single front gate and undoped channel. ► The operation is based on the feedback between carriers flow and injection barriers. ► Impact ionization and doping-related bipolar action are not involved. We experimentally demo...

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Bibliographic Details
Published in:Solid-state electronics 2012-10, Vol.76, p.109-111
Main Authors: Wan, J., Cristoloveanu, S., Le Royer, C., Zaslavsky, A.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Field-effect transistor
Hysteresis
Ionization
Other multijunction devices. Power transistors. Thyristors
Positive feedback
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sharp switching
Silicon on insulator
Simulation
Switching
Switching, multiplexing, switched capacity circuits
Thyristors
Transistors
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Summary:► We demonstrate a switching device with SS108. ► The device structure features single front gate and undoped channel. ► The operation is based on the feedback between carriers flow and injection barriers. ► Impact ionization and doping-related bipolar action are not involved. We experimentally demonstrate a field-effect transistor with a single front gate built on fully-depleted silicon-on-insulator substrate that possesses extremely steep switching slope (≪1mV/decade) and gate-controllable hysteresis. The mechanism for the sharp switching, confirmed by simulations, involves the positive feedback between the gate-modulated charge injection barriers and the electron and hole components of the source–drain current. The transistor is named Z2-FET as it features zero impact ionization (unlike thyristors) and zero subthreshold swing.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2012.05.061