Proposed triple-wall, voltage-isolating electrodes for multiple-bias-voltage 3D sensors

Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additiona...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2012-09, Vol.685, p.98-103
Main Authors: Parker, Sherwood, Mokhov, N.V., Rakhno, I.L., Tropin, I.S., DaVia, Cinzia, Seidel, S., Hoeferkamp, M., Metcalfe, J., Wang, Rui, Kenney, Christopher, Hasi, Jasmine, Grenier, Philippe
Format: Article
Language:English
Subjects:
3D silicon detectors
Accelerators
Active edges
Electric potential
Electrodes
Forward proton tagging
Insulating layers
Non-uniform irradiation
Radiation hardness
Sensors
Silicon
Three dimensional
Triple-wall electrodes
Voltage
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Summary:Dividing 3D active-edge silicon sensors into separate sections with a triple-wall sandwich of two trench electrodes separated by an insulating layer, will allow two or more bias voltages to be used simultaneously. Such sensors could be fabricated with only a single group of low-temperature additional steps and may be necessary to prevent a new form of radiation-damage failure in non-uniform radiation fields.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2012.04.073