Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

The frequency (f) and bias voltage (V) dependence of electrical and dielectric properties of Au/SiO2/n-GaAs structures have been investigated in the frequency range of 10kHz–3MHz at room temperature by considering the presence of series resistance (Rs). The values of Rs, dielectric constant (ε′), di...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2012-02, Vol.15 (1), p.41-46
Main Authors: Goekcen, M, AltuntaA, H, AltA-ndal, A, Azcelik, S
Format: Article
Language:English
Subjects:
Applied sciences
Au/SiO2/n-GaAs structures
Bias
Capacitance
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric loss
Dielectric loss and relaxation
Dielectric properties
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Diodes
Electric potential
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
Frequency dependence
Gold
Negative capacitance
Permittivity (dielectric function)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Surface double layers, schottky barriers, and work functions
Voltage
Voltage dependence
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Summary:The frequency (f) and bias voltage (V) dependence of electrical and dielectric properties of Au/SiO2/n-GaAs structures have been investigated in the frequency range of 10kHz–3MHz at room temperature by considering the presence of series resistance (Rs). The values of Rs, dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tanδ) of these structures were obtained from capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements and these parameters were found to be strong functions of frequency and bias voltage. In the forward bias region, C–V plots show a negative capacitance (NC) behavior, hence ε′–V plots for each frequency value take negative values as well. Such negative values of C correspond to the maximum of the conductance (G/ω). The crosssection of the C–V plots appears as an abnormality when compared to the conventional behavior of ideal Schottky barrier diode (SBD), metal–insulator–semiconductor (MIS) and metal–oxide–semiconductor (MOS) structures. Such behavior of C and ε′ has been explained with the minority-carrier injection and relaxation theory. Experimental results show that the dielectric properties of these structures are quite sensitive to frequency and applied bias voltage especially at low frequencies because of continuous density distribution of interface states and their relaxation time.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2011.08.001