Analysis of the surface state of epi-ready Ge wafers

The surface state of Ge epi-ready wafers (such as those used on III-V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide la...

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Bibliographic Details
Published in:Applied surface science 2012-08, Vol.258 (20), p.8166-8170
Main Authors: GABAS, M, PALANCO, S, BIJANI, S, BARRIGON, E, ALGORA, C, REY-STOLLE, I, GARCIA, I, RAMOS-BARRADO, J. R
Format: Article
Language:English
Subjects:
Carbon
Carbonates
Chlorine
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Contaminants
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Germanium
Germanium oxides
Oxides
Physics
Wafers
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Summary:The surface state of Ge epi-ready wafers (such as those used on III-V multijunction solar cells) supplied by two different vendors has been studied using X-ray photoemission spectroscopy. Our experimental results show that the oxide layer on the wafer surface is formed by GeO and GeO2. This oxide layer thickness differs among wafers coming from different suppliers. Besides, several contaminants appear on the wafer surfaces, carbon and probably chlorine being common to every wafer, irrespective of its origin. Wafers from one of the vendors show the presence of carbonates at their surfaces. On such wafers, traces of potassium seem to be present too.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2012.05.015