Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates

We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150°C. We investigate the effect of hydrogen dilution durin...

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Bibliographic Details
Published in:Journal of electronic materials 2012-03, Vol.41 (3), p.494-497
Main Authors: Shahrjerdi, D., Hekmatshoar, B., Bedell, S. W., Hopstaken, M., Sadana, D. K.
Format: Article
Language:English
Subjects:
Applied sciences
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Chemistry and Materials Science
Cross-disciplinary physics: materials science
rheology
Doping
Electronics
Electronics and Microelectronics
Epitaxial layers
Epitaxy
Exact sciences and technology
Instrumentation
Materials
Materials Science
Methods of deposition of films and coatings
film growth and epitaxy
Optical and Electronic Materials
Physics
Silicon
Silicon substrates
Solid State Physics
Strain
Substrates
Temperature effects
X-rays
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Summary:We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon epitaxy was performed in a silane and hydrogen gas mixture at temperatures as low as 150°C. We investigate the effect of hydrogen dilution during the silicon epitaxy on the strain level by high-resolution x-ray diffraction. Additionally, triple-axis x-ray reciprocal-space mapping of the samples indicates that (i) the epitaxial layers are fully strained and (ii) the strain is graded. Secondary-ion mass spectrometry depth profiling reveals the correlation between the strain gradient and the hydrogen concentration profile within the epitaxial layers. Furthermore, heavily phosphorus-doped layers with an electrically active doping concentration of ~2 × 10 20  cm −3 were obtained at such low growth temperatures.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-011-1807-6