Loading…
Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots
The influence of SiO2 and Si3N4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO2 layers, Si3N4 matrix imposes large interfacial surface energy on QDs and enhances th...
Saved in:
Published in: | Journal of physics. D, Applied physics Applied physics, 2012-03, Vol.45 (10), p.105303-1-9 |
---|---|
Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The influence of SiO2 and Si3N4 dielectric matrices on the structural, phonon, luminescence and thermal properties of Ge quantum dots (QDs) has been experimentally investigated. Compared with the case of QDs in SiO2 layers, Si3N4 matrix imposes large interfacial surface energy on QDs and enhances their Ostwald ripening rate, appearing to be conducive for an improvement in crystallinity and a morphology change to a more perfectly spherical shape of Ge QDs. Quantum confinement induced electronic structure modulation for Ge QDs is observed to be strongly influenced not only by the QD size but also by the embedded matrix. Both matrix and surface effects offer additional mechanisms to QD itself for controlling the optical and thermal properties of the QDs. |
---|---|
ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/0022-3727/45/10/105303 |