The overall device resistance in organic thin film transistor: Application to octithiophene (8T)

[Display omitted] ► Contact resistance is due to the charge carrier injection at the metal/OSC interface. ► We report a model of overall device resistance, as a function of the gate bias V G. ► We have reproduced very well the output characteristic. Organic thin film transistors were grown with vapo...

Full description

Saved in:
Bibliographic Details
Published in:Synthetic metals 2012-02, Vol.162 (1), p.231-235
Main Authors: Mansouri, S., Zorai, S., Bourguiga, R.
Format: Article
Language:English
Subjects:
Application fields
Applied sciences
Boundaries
Contact resistance
Devices
Drains
Electrodes
Electronics
Exact sciences and technology
MNR–GBT model
Organic TFT
Overall device resistance
Polymer industry, paints, wood
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Technology of polymers
Thin film transistors
Thin films
Transistors
VRH model
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:[Display omitted] ► Contact resistance is due to the charge carrier injection at the metal/OSC interface. ► We report a model of overall device resistance, as a function of the gate bias V G. ► We have reproduced very well the output characteristic. Organic thin film transistors were grown with vapor-deposited polycrystalline octithiophene on silicon oxide insulating layers. The performance of an organic thin film transistor may also be affected by morphological details of the interface between the metal and organic-semiconductor near the source and the drain contact. The most important variable contribution to the contact resistance is due to the charge carrier injection at the metal/OSC interface. We have investigated how traps, at the grain boundaries of an organic semiconductor thin film layer placed between the metal electrode and the active layer can contribute to the contact resistance. In this paper we have compared two models, Meyer–Neldel rule-grain boundary trapping model (MNR–GBT) and variable range hopping model (VRH) to extract the overall device resistance of the organic thin film transistor based on octithiophene. We have reproduced very well the output characteristic I DS( V DS) using the good model of overall device resistance.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2011.12.003