Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs

We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO/sub 2/ gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible w...

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Bibliographic Details
Published in:IEEE electron device letters 2003-12, Vol.24 (12), p.739-741
Main Authors: Yu, D.S., Wu, C.H., Huang, C.H., Chin, A., Chen, W.J., Chunxiang Zhu, Li, M.F., Dim-Lee Kwong
Format: Article
Language:English
Subjects:
Charge carrier processes
Dielectric substrates
Electron mobility
Fabrication
Leakage current
MOSFET circuits
Silicidation
Temperature
Very large scale integration
Voltage
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Summary:We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO/sub 2/ gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi/sub t-x/Ge/sub x/. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.819274