High-speed Schottky-barrier pMOSFET with fT=280 GHz

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Bibliographic Details
Published in:IEEE electron device letters 2004-04, Vol.25 (4), p.220
Main Authors: Fritze, M, Chen, C.L, Calawa, S, Yost, D, Wheeler, B, Wyatt, P, Keast, C.L, Snyder, J, Larson, J
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.826294