Bulk Lateral MEM Resonator on Thin SOI With High [Formula Omitted]-Factor

All the reported MEM resonators are fabricated on 1.25-mum SOI substrates by a hard mask and deep reactive-ion etching process, resulting in transduction gaps smaller than 200 nm.

Bibliographic Details

Published in:	Journal of microelectromechanical systems 2009-04, Vol.18 (2), p.466
Main Authors:	Grogg, D, Tekin, H.C, Ciressan-Badila, N.D, Tsamados, D, Mazza, M, Ionescu, A.M
Format:	Article
Language:	English
Online Access:	Get full text
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