On the Use of a SiGe Spike in the Emitter to Improve the fTxBV Product of High-Speed SiGe HBTs

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Published in:IEEE electron device letters 2007-04, Vol.28 (4), p.270
Main Authors: Choi, L.J, Van Huylenbroeck, S, Piontek, A, Sibaja-Hernandez, A, Kunnen, E, Meunier-Beillard, P, van Noort, W.D, Hijzen, E, Decoutere, S
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container_issue 4
container_start_page 270
container_title IEEE electron device letters
container_volume 28
creator Choi, L.J
Van Huylenbroeck, S
Piontek, A
Sibaja-Hernandez, A
Kunnen, E
Meunier-Beillard, P
van Noort, W.D
Hijzen, E
Decoutere, S
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doi_str_mv 10.1109/LED.2007.892366
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title On the Use of a SiGe Spike in the Emitter to Improve the fTxBV Product of High-Speed SiGe HBTs
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