On the Use of a SiGe Spike in the Emitter to Improve the fTxBV Product of High-Speed SiGe HBTs

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Bibliographic Details
Published in:IEEE electron device letters 2007-04, Vol.28 (4), p.270
Main Authors: Choi, L.J, Van Huylenbroeck, S, Piontek, A, Sibaja-Hernandez, A, Kunnen, E, Meunier-Beillard, P, van Noort, W.D, Hijzen, E, Decoutere, S
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.892366