Threshold and Filament Current Densities in Chalcogenide-Based Switches and Phase-Change-Memory Devices

Threshold current density of switching was found to grow several decades at constant threshold electric field with reducing interelectrode distance. Data are compared with predictions of various switching theories. Experimental estimate of current density in an electronic filament is reported based...

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Bibliographic Details
Published in:IEEE electron device letters 2009-08, Vol.30 (8), p.814-816
Main Author: Kostylev, S.A.
Format: Article
Language:English
Subjects:
Applied sciences
Chalcogenide alloy
Circuit properties
Conducting materials
Conductivity
Contact
Current density
Density
Design. Technologies. Operation analysis. Testing
Devices
Electric contacts
Electric, optical and optoelectronic circuits
Electronic circuits
electronic filament
Electronics
Estimation theory
Exact sciences and technology
Filaments
Integrated circuits
Integrated circuits by function (including memories and processors)
Phase change materials
Phase change memory
phase-change memory (PCM)
Programming
Scalability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Switching, multiplexing, switched capacity circuits
Threshold current
Thresholds
Voltage
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Summary:Threshold current density of switching was found to grow several decades at constant threshold electric field with reducing interelectrode distance. Data are compared with predictions of various switching theories. Experimental estimate of current density in an electronic filament is reported based on a programming "dead-space" observation in a ring contact device with one subcritical bottom contact dimension. Significance of the shape of S-type negative differential conductivity curve and, namely, the slope of the second part with positive differential conductivity for the programming of phase-change memory is discussed.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2024965