Proton damage effects in high performance P-channel CCDs

P-channel CCDs with pre-rad imaging characteristics comparable to the best N-channel CCDs have been fabricated and tested. These devices have been subjected to proton damage and display the superior hardness predicted for them.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2005-12, Vol.52 (6), p.2695-2702
Main Authors: Spratt, J.P., Conger, C., Bredthauer, R., Byers, W., Groulx, R., Leadon, R., Clark, H.
Format: Article
Language:English
Subjects:
Charge coupled devices
Charge transfer
Charge transfer efficiency
Clocks
Delay effects
Devices
displacement damage hardened imagers
Displays
Hardness
Image analysis
Imaging
Life testing
P-channel CCDs
Proton damage
Protons
Silicon
Temperature
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Description
Summary:P-channel CCDs with pre-rad imaging characteristics comparable to the best N-channel CCDs have been fabricated and tested. These devices have been subjected to proton damage and display the superior hardness predicted for them.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2005.860738